Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-08-16
2011-08-16
Fahmy, Wael M (Department: 2814)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S029000, C438S485000, C257S087000, C257SE21090
Reexamination Certificate
active
07998884
ABSTRACT:
A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter.
REFERENCES:
patent: 5216303 (1993-06-01), Lu
patent: 6157047 (2000-12-01), Fujita et al.
patent: 6184158 (2001-02-01), Shufflebotham et al.
patent: 7141936 (2006-11-01), McIntyre
patent: 2002/0043943 (2002-04-01), Menzer et al.
patent: 2004/0106285 (2004-06-01), Zacharias
patent: 2006/0097654 (2006-05-01), McIntyre
patent: 2006/0180817 (2006-08-01), Hsu et al.
patent: 2006/0211267 (2006-09-01), Joshi et al.
Huang Jiandong
Joshi Pooran Chandra
Voutsas Apostolos T.
Zhang Hao
Fahmy Wael M
Kalam Abul
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
LandOfFree
Method of forming a light emitting device with a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a light emitting device with a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a light emitting device with a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2749366