Semiconductor device

Details Semiconductor device Semiconductor device

2011-08-09

2011-08-09

Chen, Jack (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S335000, C257S341000, C257SE21410

Reexamination Certificate

active

07994571

ABSTRACT:
An inventive semiconductor device includes: a body region of a second conductivity type provided on the drift region of a first conductivity type in a semiconductor layer; a trench extending from a surface of the body region in the semiconductor layer with its bottom located in the drift region; a gate electrode provided in the trench with the intervention of a gate insulation film; a source region of the first conductivity type provided in a surface layer portion of the body region; a first impurity region of the second conductivity type provided around the bottom of the trench in spaced relation from the body region; and a second impurity region of the second conductivity type provided on a lateral side of the body region in the semiconductor layer, the second impurity region being isolated from the body region and electrically connected to the first impurity region.

REFERENCES:
patent: 7834407 (2010-11-01), Nakazawa et al.
patent: 2006/0157779 (2006-07-01), Kachi et al.
patent: 2006-202931 (2006-08-01), None

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