Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-08
2008-07-08
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S362000, C361S091500
Reexamination Certificate
active
07397088
ABSTRACT:
A lateral bipolar transistor is used to protect a passive radio frequency (RF) microelectronic circuit during electrostatic discharge (ESD) events. The microelectronic circuit receives a high frequency differential input signal across first and second pads. The lateral bipolar transistor includes an n-type emitter coupled to the first pad and an n-type collector coupled to the second pad. The emitter and collector are located in a p-well, which forms the base of the transistor. The p-well is located in an isolating n-well, which in turn, is located in a p-type substrate. The n-well is coupled to receive the VDDsupply voltage and the p-substrate is coupled to a VSSreference voltage. A dielectric region can be located between the emitter and collector (in the p-well).
REFERENCES:
patent: 5886386 (1999-03-01), Tailliet
“Zener substrate triggering for CMOS ESD protection devices”, by Y. Blecher & R. Fried, pp. 2102-2103, Electronics Letters, Oct. 24, 1996, vol. 32, No. 22.
Leenaerts et al. “Bond Pad and ESD Protection Structure for 0.25 μm/0.18 μm RF-CMOS”, Proceedings of the 29thEuropean Solid-State Circuits Conference, Sep. 16-18, 2003, pp. 569-572.
Blecher Yaron
Naot Ira
Bever Hoffman & Harms LLP
Hoffman E. Eric
Prenty Mark
Tower Semiconductor Ltd.
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