Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-05-20
2008-05-20
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S658000, C438S677000, C257SE21169, C257SE21483
Reexamination Certificate
active
07375024
ABSTRACT:
The present invention relates to a method for fabricating a metal interconnection line with use of a barrier metal layer formed in a low temperature. The method includes the steps of: forming an inter-layer insulation layer on a substrate; etching predetermined regions of the inter-layer insulation layer to form a plurality of contact openings; forming an ohmic metal layer on the contact openings and the etched inter-layer insulation layer; forming a seed layer on the ohmic metal layer; forming a metal layer on the seed layer and nitriding the metal layer in a repeated number of times to form a barrier metal layer; and forming a metal interconnection line on the barrier metal layer by burying the contact openings.
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Blakely & Sokoloff, Taylor & Zafman
Everhart Caridad
Hynix / Semiconductor Inc.
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