Three-dimensional memory devices and methods of...

Static information storage and retrieval – Read/write circuit – Common read and write circuit

Reexamination Certificate

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C365S185050

Reexamination Certificate

active

07911856

ABSTRACT:
A method of accessing memory cells is disclosed. A first signal is sent to at least one layer select transistor. The at least one layer select transistor is activated based on the first signal. Signals are communicated to or from one or more memory cells based on the activated at least layer select transistor.

REFERENCES:
patent: 6906942 (2005-06-01), Ostermayr
patent: 7064978 (2006-06-01), Lee et al.
patent: 7245158 (2007-07-01), Yang et al.
patent: 7663900 (2010-02-01), Stipe
patent: 2009/0310405 (2009-12-01), Lee et al.

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