Formation of nitrogen containing dielectric layers having a...

Details Formation of nitrogen containing dielectric layers having a... Formation of nitrogen containing dielectric layers having a...

2008-07-01

2008-07-01

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Reexamination Certificate

active

07393787

ABSTRACT:
The present invention provides a method for manufacturing a gate dielectric, a method for manufacturing a semiconductor device, and a method for manufacturing an integrated circuit. The method for manufacturing the gate dielectric, without limitation, may include forming a nitrided dielectric layer (520) over a substrate (310), the nitrided dielectric layer (520) having a non-uniformity of nitrogen in a bulk thereof, and removing at least a portion of the nitrided dielectric layer (520) using a high temperature chemical treatment, the removing reducing the non-uniformity.

REFERENCES:
patent: 6730566 (2004-05-01), Niimi et al.
patent: 2005/0197273 (2005-09-01), Savu et al.
patent: 2006/0054181 (2006-03-01), Rayandayan et al.

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