Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-03-15
2011-03-15
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S094000, C257S096000, C257S103000, C257S449000, C257SE33051
Reexamination Certificate
active
07906785
ABSTRACT:
A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.
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Japanese Office Action, w/ English translation thereof, issued in Japanese Patent Application No. JP 2006-298298772 dated Mar. 2, 2010.
Baik Doo Go
Kim Tae Jun
Oh Bang Won
Jackson, Jr. Jerome
McDermott Will & Emery LLP
Page Dale
Samsung LED Co., Ltd.
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