Semiconductor device having first and second insulation...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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C257S500000, C257S510000, C257S526000, C257SE21564

Reexamination Certificate

active

07906829

ABSTRACT:
A semiconductor device includes: a semiconductor substrate having a first surface and a second surface; a first insulation separation region disposed on the first surface of the semiconductor substrate; a second insulation separation region surrounded with the first insulation separation region and electrically isolated from the first insulation separation region; a semiconductor element disposed in the second insulation separation region; and an electrode connecting to the first insulation separation region for energizing and generating heat in the first insulation separation region. The first insulation separation region functions as a heater so that the semiconductor element in the second insulation separation region is locally heated.

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patent: A-2001-012985 (2001-01-01), None
patent: A-2001-345420 (2001-12-01), None
Muth et al., Werner. “Bias Temperature Instability Assessment of N- and P-Channel MOS Transistors Using a Polysilicon Resistive Heated Scribe Lane Test Structure.”Microelectronics Reliability. vol. 44 (2004): pp. 1251-1262.
Notice of Reason for Refusal mailed on May 25, 2010 in the corresponding Japanese application No. 2005-172680 (and English translation).

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