Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-25
2011-01-25
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000, C257S411000
Reexamination Certificate
active
07875937
ABSTRACT:
A semiconductor device is described. That semiconductor device comprises a high-k gate dielectric layer that is formed on a substrate that applies strain to the high-k gate dielectric layer, and a metal gate electrode that is formed on the high-k gate dielectric layer.
REFERENCES:
patent: 2002/0008289 (2002-01-01), Murota et al.
patent: 2006/0113605 (2006-06-01), Currie
patent: 2006/0220090 (2006-10-01), Metz et al.
patent: 2006/0247131 (2006-11-01), Horibe et al.
Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Kavalieros Jack
Cao Phat X
Intel Corporation
Nelson Kenneth A.
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