Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

2011-06-21

2011-06-21

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S324000, C257SE29003

Reexamination Certificate

active

07964906

ABSTRACT:
A semiconductor device has a semiconductor layer, a plurality of charge-accumulating layers formed at a predetermined interval from each other on said semiconductor layer through a first insulating film, a second insulating film formed on said charge-accumulating layer, a control gate including a silicide film formed on said second insulating film, a third insulating film formed between said control gates so that the top surface of said third insulating film is lower than the top surface of said control gate but is higher than the top surface of said second insulating film, a fourth insulating film formed into a concave shape so as to cover the top surface of said third insulating film and the side surfaces of said control gate positioned higher than the top surface of said third insulating film, and a fifth insulating film formed on said control gate and said fourth insulating film.

REFERENCES:
patent: 5989988 (1999-11-01), Iinuma et al.
patent: 6207492 (2001-03-01), Tzeng et al.
patent: 6372641 (2002-04-01), Lien
patent: 6413820 (2002-07-01), Bui
patent: 6770942 (2004-08-01), Iinuma
patent: 2003/0210582 (2003-11-01), Kinoshita

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