Electrostatic discharge protection device

Details Electrostatic discharge protection device Electrostatic discharge protection device

2011-07-26

2011-07-26

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S360000, C257S361000, C257S362000, C257S370000

Reexamination Certificate

active

07986011

ABSTRACT:
The invention provides an electrostatic discharge (ESD) protection device with an increased capability to discharge ESD generated current with a reduced device area. The ESD protection device comprises a grounded gate MOS transistor (1) with a source region (3) and a drain region (4) of a first semiconductor type interposed by a first well region (7) of a second semiconductor type. Second well regions (6) of the first semiconductor type, interposed by the first well region (7), are provided beneath the source region (3) and the drain region (4). Heavily doped buried regions (8,9) of the same semiconductor types, respectively, as the adjoining well regions (6,7) are provided beneath the well regions (6,7).

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