Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2011-07-19

2011-07-19

Stark, Jarrett (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S391000, C257S374000

Reexamination Certificate

active

07981783

ABSTRACT:
A semiconductor device including at least one drift region formed near a channel region on a substrate, a first buried insulating layer formed in the drift region, and a first reduced surface field region interposed between the first buried insulating layer and the drift region. Accordingly, the semiconductor device provides first reduced surface field regions arranged between drift regions and first buried insulating layers, thus having advantages of improved junction integrity, suitability for LDMOS transistors employing a high operation voltage and reduced total size.

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