Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2011-04-12
2011-04-12
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S154000, C365S156000
Reexamination Certificate
active
07924640
ABSTRACT:
A test method includes providing an integrated circuit, where the integrated circuit includes a memory base cell, where the memory base cell includes a first storage node set, a second storage node set, a set of other nodes, and a set of circuit elements each having a plurality of terminals, where the set of other nodes includes a first data node for accessing the first storage node set, a first access control node for controlling the access of the first storage node set, a first supply node for supplying the first storage node set, and a second supply node for supplying the second storage node set, where the first and second supply nodes are of the same sinking or sourcing type. The method further includes conducting a circuit element test on a circuit element in the set of circuit elements, where in the circuit element test the first and second supply nodes are not connected together, each terminal of the circuit element is directly forced with an electrical quantity, and an electrical quantity is directly measured from a terminal of the circuit element. Further, the method includes conducting at least one of a static noise margin test or a full cell test on the memory base cell.
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patent: 2008/0144421 (2008-06-01), Deng
Deng Xiaowei
Loh Wah Kit
Brady III Wade J.
Dinh Son
Le Toan
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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