Semiconductor device, manufacturing method thereof, and data...

Details Semiconductor device, manufacturing method thereof, and data... Semiconductor device, manufacturing method thereof, and data...

2011-04-12

2011-04-12

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S589000

Reexamination Certificate

active

07923773

ABSTRACT:
A bottom of a gate trench has a first bottom relatively far from an STI and a second bottom relatively near from the STI. A portion, in an active region, configuring the second bottom of the gate trench configures a side-wall channel region, and has a thin-film SOI structure sandwiched between the gate electrode and the STI. On the other hand, a portion configuring the first bottom of the gate trench functions as a sub-channel region. A curvature radius of the second bottom is larger than a curvature radius of the first bottom. In an approximate center in a length direction of the gate trench, a bottom of a trench is approximately flat, and on the other hand, in ends of the length direction, a nearly whole bottom of the trench is curved.

REFERENCES:
patent: 7189617 (2007-03-01), Slesazeck et al.
patent: 08-274277 (1996-10-01), None

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