Flash memory cell string

Details Flash memory cell string Flash memory cell string

2011-06-14

2011-06-14

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29309

Reexamination Certificate

active

07960778

ABSTRACT:
The present invention relates to a flash memory cell string. The flash memory cell string includes a plurality of cell devices and switching devices connected to ends of the cell devices. Each of the cell devices includes a semiconductor substrate, and a transmissive insulating layer, a charge storage node, a control insulating layer and a control electrode sequentially formed on the semiconductor substrate. In the flash memory cell string, a buried insulating layer is provided on the semiconductor substrate between the cell device and an adjacent cell device, thus enabling an inversion layer, which performs the functions of source/drain, to be easily formed.According to the present invention, the reduction characteristics and performance of the cell devices of NAND flash memory are improved, and the inversion layer of a channel is induced through fringing electric fields from the control electrode and the charge storage node if necessary.

REFERENCES:
patent: 2006/0258063 (2006-11-01), Forbes
patent: 2008/0073695 (2008-03-01), Mizukami et al.
patent: 2008/0111178 (2008-05-01), Kinoshita et al.

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