Method and integrated circuits capable of saving layout areas

Details Method and integrated circuits capable of saving layout areas Method and integrated circuits capable of saving layout areas

2011-04-05

2011-04-05

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C257S360000, C257S363000, C257S379000, C257S380000, C257SE29141, C257SE29152, C257SE29343

Reexamination Certificate

active

07919821

ABSTRACT:
An integrated circuit includes a diffusion layer, a first poly-silicon layer, and a second poly-silicon layer. The first poly-silicon layer is located on the diffusion layer to form a transistor. The second poly-silicon includes a first section and a second section. The first section of the second poly-silicon layer is located on the first poly-silicon layer to form a capacitor. The second section of the second poly-silicon layer is located on the diffusion layer to form a resistor.

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