Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-03-22
2011-03-22
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S196000, C438S218000, C438S221000, C438S294000, C438S404000, C257S093000, C257S374000, C257S446000, C257S501000, C257S506000
Reexamination Certificate
active
07910453
ABSTRACT:
The present disclosure provides a method of manufacturing a microelectronic device. The method includes forming recessed shallow trench isolation (STI) features in a semiconductor substrate, defining a semiconductor region between adjacent two of the recessed STI features; forming a tunnel dielectric feature within the semiconductor region; forming a nitride layer on the recessed STI features and the tunnel dielectric feature; etching the nitride layer to form nitride openings within the recessed STI features; partially removing the recessed STI features through the nitride openings, resulting in gaps between the nitride layer and the recessed STI features; and forming a first dielectric material on surfaces of the nitride layer, sealing the nitride openings.
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Chinese Patent Office, Office Action of Apr. 13, 2010, Application No. 200910000109.4, 5 pages.
Hsieh Chia-Ta
Lee Chun-Hung
Wu Chun-Pei
Xu Jeff J.
Garcia Joannie A
Haynes and Boone LLP
Richards N Drew
Taiwan Semiconductor Manufacturing Company , Ltd.
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