Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-08-23

2011-08-23

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S285000, C438S589000, C438S618000, C257SE21577, C257SE21584, C257SE21585

Reexamination Certificate

active

08003525

ABSTRACT:
A GaN layer and an n-type AlGaN layer are formed over an insulating substrate, and thereafter, a gate electrode, a source electrode and a drain electrode are formed on them. Next, an opening reaching at least a surface of the insulating substrate is formed in the source electrode, the GaN layer and the n-type AlGaN layer. Then, a nickel (Ni) layer is formed in the opening. Thereafter, by conducting dry etching from the back side while making the nickel (Ni) layer serve as an etching stopper, a via hole reaching the nickel (Ni) layer is formed in the insulating substrate. Then, a via wiring is formed extending from an inside the via hole to the back surface of the insulating substrate.

REFERENCES:
patent: 7067857 (2006-06-01), Mochizuki et al.
patent: 7078743 (2006-07-01), Murata et al.
patent: 7339207 (2008-03-01), Murata et al.
patent: 2004/0212034 (2004-10-01), Mochizuki et al.
patent: 2005/0001235 (2005-01-01), Murata et al.
patent: 2006/0289894 (2006-12-01), Murata et al.
patent: 2007/0200134 (2007-08-01), Therrien et al.
patent: 2004-327604 (2004-11-01), None
patent: 2004-363563 (2004-12-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2728758