Apparatus and method for partial ion implantation using atom...

Details Apparatus and method for partial ion implantation using atom... Apparatus and method for partial ion implantation using atom...

2011-06-28

2011-06-28

Nguyen, Kiet T (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

Reexamination Certificate

active

07968857

ABSTRACT:
A partial ion implantation apparatus and method are provided. The partial ion implantation apparatus includes an ion beam generator, a wafer chuck, and a plurality of atom-vibrating devices. The ion beam generator is configured to generate an ion beam. The wafer chuck is disposed to support a wafer into which the ion beam is implanted. The atom-vibrating devices are configured to vibrate silicon atoms in the wafer.

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patent: 10-2005-0050658 (2005-05-01), None
patent: 10-2007-0086877 (2007-08-01), None

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