Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-08
2011-03-08
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S316000, C257SE29129
Reexamination Certificate
active
07902614
ABSTRACT:
A semiconductor device includes a first conductive layer, a first intermediate structure over the first conductive layer, a second intermediate structure over the first intermediate structure, and a second conductive layer over the second intermediate structure. The first intermediate structure includes a metal silicide layer and a nitrogen containing metal layer. The second intermediate structure includes at least a nitrogen containing metal silicide layer.
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Cho Heung-Jae
Kim Tae-Kyung
Kim Yong-soo
Lim Kwan-Yong
Sung Min-Gyu
Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
Mandala Victor A
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