Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-09
2011-08-09
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S308000, C257S311000, C257SE21014, C257SE21015, C257SE27089, C257SE29342
Reexamination Certificate
active
07994561
ABSTRACT:
A semiconductor device for preventing the leaning of storage nodes and a method of manufacturing the same is described. The semiconductor device includes support patterns that are formed to support a plurality of cylinder type storage nodes. The support patterns are formed of a BN layer and have a hexagonal structure. The BN layer forming the support patterns has compressive stress as opposed to tensile stress and can therefore withstand cracking in the support patterns.
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Eun Byung Soo
Kim Hun
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Soward Ida M
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