Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-01-18

2011-01-18

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S336000, C257SE21294, C257SE29001, C257SE29262, C438S270000, C438S585000

Reexamination Certificate

active

07872301

ABSTRACT:
A semiconductor device is provided with first and second silicon pillars formed substantially perpendicularly to a main surface of a substrate, a gate electrode covering side surfaces of the first and second silicon pillars via a gate insulation film, first and second diffusion layers provided on a lower part and an upper part of the first silicon pillar, respectively, a cap insulation film covering an upper part of the second silicon pillar, a gate contact connected to the gate electrode, and a protection insulation film in contact with the upper surfaces of the first and second silicon pillars. The gate contact is connected to an upper region of the gate electrode provided at the periphery of the cap insulation film. An opening is formed on the protection insulation film provided at the side of the first silicon pillar.

REFERENCES:
patent: 2003/0001290 (2003-01-01), Nitayama et al.
patent: 2004/0150028 (2004-08-01), Horiguchi
patent: H5-136374 (1993-06-01), None
patent: H6-209089 (1994-07-01), None
patent: H9-8295 (1997-01-01), None
patent: 2002-83945 (2002-03-01), None
patent: 2003-303901 (2003-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2722085