Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-07-26

2011-07-26

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S637000, C438S702000, C257SE21580

Reexamination Certificate

active

07985685

ABSTRACT:
A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

REFERENCES:
patent: 2004/0253822 (2004-12-01), Matsui et al.
patent: 2005/0266355 (2005-12-01), Matsui et al.
patent: 2007/0000872 (2007-01-01), Matsui et al.
patent: 2007/0128874 (2007-06-01), Shida et al.
patent: 2004-363191 (2004-12-01), None
patent: 2005-268409 (2005-09-01), None
patent: 2006-19690 (2006-01-01), None
patent: 2006-19696 (2006-01-01), None
patent: 2007-150184 (2007-06-01), None

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