Method for reducing dielectric overetch when making contact...

Details Method for reducing dielectric overetch when making contact... Method for reducing dielectric overetch when making contact...

2011-04-19

2011-04-19

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C257SE21576

Reexamination Certificate

active

07928007

ABSTRACT:
In a first preferred embodiment of the present invention, conductive features are formed on a first dielectric etch stop layer, and a second dielectric material is deposited over and between the conductive features. A via etch to the conductive features which is selective between the first and second dielectrics will stop on the dielectric etch stop layer, limiting overetch. In a second embodiment, a plurality of conductive features is formed in a subtractive pattern and etch process, filled with a dielectric fill, and then a surface formed coexposing the conductive features and dielectric fill. A dielectric etch stop layer is deposited on the surface, then a third dielectric covers the dielectric etch stop layer. When a contact is etched through the third dielectric, this selective etch stops on the dielectric etch stop layer. A second etch makes contact to the conductive features.

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