Integrated capacitor with reduced voltage/temperature drift

Details Integrated capacitor with reduced voltage/temperature drift Integrated capacitor with reduced voltage/temperature drift

1996-01-11

1998-09-01

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257213, 257300, 307482, 307443, H03K 1912

Patent

active

058014110

ABSTRACT:
An integrated capacitor structure having substantially reduced temperature and voltage coefficients including a combination of conventional N-depletion and P-depletion MOS gate capacitors connected in parallel and optimized for use at low bias voltages, where both the N-depletion and P-depletion capacitor structures have substantially zero temperature coefficients in their fully depleted region of operation.

REFERENCES:
patent: 5008799 (1991-04-01), Montalvo
patent: 5073731 (1991-12-01), Oh
patent: 5550397 (1996-08-01), Lifshitz et al.
patent: 5650340 (1997-07-01), Burr et al.
patent: 5674760 (1997-10-01), Hong
Gregorian, Roubik and Temes, Gabor C., Analog MOS Integrated Circuits for Signal Processing, Section 3.5. MOS Capacitors, pp. 86-93.

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