Semiconductor structure having an enlarged finger shaped...

Details Semiconductor structure having an enlarged finger shaped... Semiconductor structure having an enlarged finger shaped...

2011-01-25

2011-01-25

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S342000, C257S339000, C438S140000, C438S454000

Reexamination Certificate

active

07875930

ABSTRACT:
The invention provides a semiconductor structure. A first type body doped region is deposited on a first type substrate. A first type heavily-doped region having a finger portion with an enlarged end region is deposited on the first type body doped region. A second type well region is deposited on the first type substrate. A second type heavily-doped region is deposited on the second type well region. An isolation structure is deposited between the first type heavily-doped region and the second type heavily-doped region. A gate structure is deposited on the first type substrate between the first type heavily-doped region and the isolation structure.

REFERENCES:
patent: 5633521 (1997-05-01), Koishikawa
patent: 6084277 (2000-07-01), Disney et al.
patent: 7115958 (2006-10-01), Disney et al.
patent: 2004/0178443 (2004-09-01), Hossain et al.
patent: 2009/0020814 (2009-01-01), Choi et al.

Affiliated with

Also associated with

Rating

Semiconductor structure having an enlarged finger shaped... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor structure having an enlarged finger shaped..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure having an enlarged finger shaped... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2720429