Semiconductor device having trench shield electrode structure

Details Semiconductor device having trench shield electrode structure Semiconductor device having trench shield electrode structure

2011-03-29

2011-03-29

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257SE27091

Reexamination Certificate

active

07915672

ABSTRACT:
In one embodiment, a structure for a semiconductor device having a trench shield electrode includes a control pad, control runners, shield runners, and a control/shield electrode contact structure. The structure is configured to use a single level of metal to connect the various components. In another embodiment, a shield runner is placed in an offset from center configuration.

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