Bond pad structures and semiconductor devices using the same

Details Bond pad structures and semiconductor devices using the same Bond pad structures and semiconductor devices using the same

2011-03-29

2011-03-29

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

C257S685000, C257S686000, C257S723000, C257S777000, C257SE23085

Reexamination Certificate

active

07915744

ABSTRACT:
A semiconductor device comprises a first semiconductor die and a second semiconductor die. The first semiconductor die comprises a at least one first bond pads formed on a peripheral region of the first semiconductor die, a at least one re-distributed layer (RDL) pads formed on a center region of the first semiconductor die, and a at least one wire routes interconnecting the first bond pads and the RDL pads. The second semiconductor die is disposed over the first semiconductor die, wherein the second semiconductor die has a at least one second bond pads electrically connecting to the RDL pads via bonding wires; wherein the RDL pad is supported by at least a buffer layer.

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