Method for manufacturing semiconductor device by applying...

Details Method for manufacturing semiconductor device by applying... Method for manufacturing semiconductor device by applying...

2011-06-14

2011-06-14

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S166000, C438S378000, C438S458000, C438S478000, C438S479000, C438S480000, C438S486000, C257S347000

Reexamination Certificate

active

07960262

ABSTRACT:
To provide a low-cost high performance semiconductor device and a method for manufacturing the semiconductor device, a separate single-crystal semiconductor layer having a first region and a non-single-crystal semiconductor layer having a second region are provided over a substrate. Further, it is preferable that a cap film is formed over either the separate single-crystal semiconductor layer or the non-single-crystal semiconductor layer, and the first region and the second region are irradiated with a laser beam by applying the laser beam from above the cap film.

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