Phase change memory, phase change memory assembly, phase...

Details Phase change memory, phase change memory assembly, phase... Phase change memory, phase change memory assembly, phase...

2011-01-25

2011-01-25

Mai, Son L (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S100000, C365S148000, C257S002000, C257S296000

Reexamination Certificate

active

07876605

ABSTRACT:
A phase change memory having a memory material layer consisting of a phase change material, and a first and second electrical contact which are located at a distance from one another and via which a switching zone of the memory material layer can be traversed by a current signal, wherein the current signal can be used to induce a reversible phase change between a crystalline phase and an amorphous phase and thus a change in resistance of the phase change material in the switching zone. The invention also relates to a phase change memory assembly, a phase change memory cell, a 2D phase change memory cell array, a 3D phase change memory cell array and an electronic component.

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