Semiconductor device with vertical trench and lightly doped...

Details Semiconductor device with vertical trench and lightly doped... Semiconductor device with vertical trench and lightly doped...

2011-04-19

2011-04-19

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257SE27091

Reexamination Certificate

active

07928505

ABSTRACT:
The vertical trench MOSFET comprises: an N type epitaxial region formed on an upper surface of an N+type substrate having a drain electrode on a lower surface thereof; a gate trench extending from a front surface into the N type epitaxial region; a gate electrode positioned in the gate trench so as to interpose an insulator; a channel region formed on the N type epitaxial region; a source region formed on the channel region; a source electrode formed on the source region; a source trench extending from the front surface into the N type epitaxial region; and a trench-buried source electrode positioned in the source trench so as to interpose an insulator, wherein the source electrode contacts with the trench-buried source electrode.

REFERENCES:
patent: 6710403 (2004-03-01), Sapp
patent: 2008/0073707 (2008-03-01), Darwish
patent: 2003- 533889 (2003-11-01), None
patent: 2004- 241413 (2004-08-01), None
patent: 2006- 196518 (2006-07-01), None
patent: 02/058160 (2002-07-01), None

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