MRAM device with shared source line

Details MRAM device with shared source line MRAM device with shared source line

2011-08-09

2011-08-09

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000, C365S225500, C365S243500

Reexamination Certificate

active

07995378

ABSTRACT:
In a particular embodiment, a memory device includes a first memory cell and a second memory cell. The memory device also includes a first bit line associated with the first memory cell and a second bit line associated with the second memory cell. The memory device also includes a source line coupled to the first memory cell and coupled to the second memory cell.

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International Search Report—PCT/US08/087741, International Search Authority—European Patent Office—Mar. 4, 2009.
Written Opinion—PCT/US08/087741, International Search Authority—European Patent Office—Mar. 4, 2009.

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