Semiconductor component arrangement comprising a trench...

Details Semiconductor component arrangement comprising a trench... Semiconductor component arrangement comprising a trench...

2011-01-11

2011-01-11

Nguyen, Thanh (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S330000, C257SE29027, C257SE29121

Reexamination Certificate

active

07868363

ABSTRACT:
Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least a gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises an at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.

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