Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-08-23
2011-08-23
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S758000, C257SE27046, C257S192000
Reexamination Certificate
active
08003975
ABSTRACT:
A semiconductor integrated circuit device includes: a semiconductor layer having a principal surface on which a source electrode, a drain electrode and a gate electrode are formed and having a first through hole; an insulating film formed in contact with the semiconductor layer and having a second through hole; a first interconnection formed on the semiconductor layer through the first through hole and connected to one of the source electrode, the drain electrode and the gate electrode which is exposed in the first through hole; and a second interconnection formed on the insulating film through the second through hole and connected to another of the source electrode, the drain electrode and the gate electrode which is exposed in the second through hole. The first interconnection and the second interconnection face each other and form a microstrip line.
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Tanaka Tsuyoshi
Ueda Tetsuzo
Jiang Fang-Xing
McDermott Will & Emery LLP
Panasonic Corporation
Warren Matthew E
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