Image sensor with self-boosting transfer transistor gate and...

Details Image sensor with self-boosting transfer transistor gate and... Image sensor with self-boosting transfer transistor gate and...

2011-07-05

2011-07-05

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S462000

Reexamination Certificate

active

07973346

ABSTRACT:
Disclosed is a image sensor (e.g., a CMOS image sensor) including pixels each having a transfer transistor and a drive transistor, in which the gate of at least one of the transistors has a boosting gate disposed over it comprised of a conductive film pattern with interposing an insulation film. Thus, a voltage applied to the boosting gate is capacitively coupled to at least one of the transfer gate of the transfer transistor and a drive gate of the drive transistor. The transfer gate is supplied with the sum of the transfer voltage and the boosting gate-coupling voltage as a result and there is no need for providing a high voltage generator for the image sensor. The dynamic range of operation may be enhanced if such a coupling voltage is applied to the drive gate of the drive transistor.

REFERENCES:
patent: 4902637 (1990-02-01), Kondou et al.
patent: 6521924 (2003-02-01), Han et al.
patent: 6780666 (2004-08-01), McClure
patent: 2000-156491 (2000-06-01), None
patent: 2001-250934 (2001-09-01), None
patent: 2001-0061346 (2001-07-01), None
patent: 2003-0084492 (2003-01-01), None

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