Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-04
2011-01-04
Trinh, Michael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S344000, C257S369000, C257SE27060
Reexamination Certificate
active
07863681
ABSTRACT:
An insulated-gate field-effect transistor (100, 100V,140, 150, 150V,160, 170, 170V,180, 180V,190, 210, 210W,220, 220U,220V,220W,380, or480) has a hypoabrupt vertical dopant profile below one (104or264) of its source/drain zones for reducing the parasitic capacitance along the pn junction between that source/drain zone and adjoining body material (108or268). In particular, the concentration of semiconductor dopant which defines the conductivity type of the body material increases by at least a factor of 10 in moving from that source/drain zone down to an underlying body-material location no more than 10 times deeper below the upper semiconductor surface than that source/drain zone. The body material preferably includes a more heavily doped pocket portion (120or280) situated along the other source/drain zone (102or262). The combination of the hypoabrupt vertical dopant profile below the first-mentioned source/drain zone, normally serving as the drain, and the pocket portion along the second-mentioned source/drain zone, normally serving as the source, enables the resultant asymmetric transistor to be especially suitable for high-speed analog applications.
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Meetin Ronald J.
National Semiconductor Corporation
Trinh Michael
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