Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-08-16

2011-08-16

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S330000, C257S331000, C257SE29254, C257SE29255, C257SE29256, C257SE29257, C257SE29262, C438S259000, C438S268000, C438S270000, C438S237000

Reexamination Certificate

active

07999314

ABSTRACT:
A semiconductor device includes an n-conductive type semiconductor substrate having a main side and a rear side, a p-conductive type layer arranged over the main side of the substrate, a main side n-conductive type region arranged in the p-conductive type layer, a rear side n-conductive type layer arranged over the rear side of the substrate, a first trench which reaches the substrate and penetrates the main side n-conductive type region and the p-conductive type layer, a second trench which reaches an inside of the p-conductive type layer, a second electrode layer, which is embedded in the second trench and connected to the p-conductive type layer. Hereby, the semiconductor device, in which the recovery property of a diode cell can be improved without damaging the property of a MOS transistor cell or an IGBT cell and the surge withstand property does not deteriorate, can be obtained.

REFERENCES:
patent: 6621107 (2003-09-01), Blanchard et al.
patent: 7061047 (2006-06-01), Ono et al.
patent: 7154145 (2006-12-01), Takahashi
patent: 7230297 (2007-06-01), Ono et al.
patent: 2004/0021174 (2004-02-01), Kobayashi
patent: 2005/0218472 (2005-10-01), Okada et al.
patent: 2006/0065925 (2006-03-01), Yoshida
patent: 2006/0138535 (2006-06-01), Ono et al.
patent: 2006/0209887 (2006-09-01), Bhalla et al.
patent: 2006/0267090 (2006-11-01), Sapp et al.
patent: 2007/0069287 (2007-03-01), Takahashi
patent: 2007/0108468 (2007-05-01), Takahashi
patent: 2007/0170549 (2007-07-01), Tsuzuki et al.
patent: 2007/0194372 (2007-08-01), Ono et al.
patent: A-62-123771 (1987-06-01), None
patent: A-06-196705 (1994-07-01), None
patent: A-09-148577 (1997-06-01), None
Office Action mailed Dec. 1, 2009 from the Japan Patent Office for corresponding patent application No. 2008-153327 (English translation enclosed).

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