Method for manufacturing thin film integrated circuit, and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S149000, C257SE21085, C257SE21533

Reexamination Certificate

active

07968386

ABSTRACT:
Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. In view of the above described object, one feature of the invention is to provide the steps of forming a separation layer over an insulating substrate and forming a thin film integrated circuit having a semiconductor film as an active region over the separation layer, wherein the thin film integrated circuit is not separated. There is less limitation on the shape of a mother substrate in the case of using the insulating substrate, when compared with the case of taking a chip out of a circular silicon wafer. Accordingly, reduction in cost of an IC chip can be achieved.

REFERENCES:
patent: 5206749 (1993-04-01), Zavracky et al.
patent: 5308967 (1994-05-01), Jurisch
patent: 5317236 (1994-05-01), Zavracky et al.
patent: 5376561 (1994-12-01), Vu et al.
patent: 5378536 (1995-01-01), Miller et al.
patent: 5389438 (1995-02-01), Miller et al.
patent: 5541399 (1996-07-01), De Vall
patent: 5757456 (1998-05-01), Yamazaki et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5834327 (1998-11-01), Yamazaki et al.
patent: 5888858 (1999-03-01), Yamazaki et al.
patent: 5985740 (1999-11-01), Yamazaki et al.
patent: 6043800 (2000-03-01), Spitzer et al.
patent: 6063654 (2000-05-01), Ohtani
patent: 6100562 (2000-08-01), Yamazaki et al.
patent: 6118502 (2000-09-01), Yamazaki et al.
patent: 6127199 (2000-10-01), Inoue et al.
patent: 6165824 (2000-12-01), Takano et al.
patent: 6168829 (2001-01-01), Russ et al.
patent: 6180439 (2001-01-01), Yamazaki et al.
patent: 6348368 (2002-02-01), Yamazaki et al.
patent: 6376333 (2002-04-01), Yamazaki et al.
patent: 6422473 (2002-07-01), Ikefuji et al.
patent: 6465287 (2002-10-01), Yamazaki et al.
patent: 6479333 (2002-11-01), Takano et al.
patent: 6509217 (2003-01-01), Reddy
patent: 6521511 (2003-02-01), Inoue et al.
patent: 6607135 (2003-08-01), Hirai et al.
patent: 6627518 (2003-09-01), Inoue et al.
patent: 6700631 (2004-03-01), Inoue et al.
patent: 6781152 (2004-08-01), Yamazaki
patent: 6814832 (2004-11-01), Utsunomiya
patent: 6821553 (2004-11-01), Miyashita et al.
patent: 6825072 (2004-11-01), Yamazaki et al.
patent: 6858518 (2005-02-01), Kondo
patent: 6873033 (2005-03-01), Kawai et al.
patent: 6887650 (2005-05-01), Shimoda et al.
patent: 6893503 (2005-05-01), Ohnuma et al.
patent: 6911358 (2005-06-01), Azami et al.
patent: 7045438 (2006-05-01), Yamazaki et al.
patent: 7056381 (2006-06-01), Yamazaki et al.
patent: 7060153 (2006-06-01), Yamazaki et al.
patent: 7091070 (2006-08-01), Imai et al.
patent: 7122445 (2006-10-01), Takayama et al.
patent: 7129145 (2006-10-01), Kawamura et al.
patent: 7131194 (2006-11-01), Hashimoto
patent: 7159241 (2007-01-01), Horiguchi et al.
patent: 7166500 (2007-01-01), Yamazaki et al.
patent: 7244662 (2007-07-01), Kondo
patent: 7271076 (2007-09-01), Yamazaki et al.
patent: 7452786 (2008-11-01), Dozen et al.
patent: 7465647 (2008-12-01), Yamazaki et al.
patent: 7566640 (2009-07-01), Yamazaki et al.
patent: 2001/0015256 (2001-08-01), Yamazaki et al.
patent: 2001/0053559 (2001-12-01), Nagao et al.
patent: 2002/0132383 (2002-09-01), Hiroki et al.
patent: 2003/0006121 (2003-01-01), Lee et al.
patent: 2003/0032210 (2003-02-01), Takayama et al.
patent: 2004/0256618 (2004-12-01), Imai et al.
patent: 2005/0037529 (2005-02-01), Nagao et al.
patent: 2005/0042798 (2005-02-01), Nagao et al.
patent: 2005/0106839 (2005-05-01), Shimoda et al.
patent: 2005/0116048 (2005-06-01), Sauter et al.
patent: 2007/0063057 (2007-03-01), Masubuchi et al.
patent: 0 443 263 (1991-08-01), None
patent: 0 607 709 (1994-07-01), None
patent: 1 193 759 (2002-04-01), None
patent: 1 455 302 (2004-09-01), None
patent: 1 455 394 (2004-09-01), None
patent: 04-351685 (1992-12-01), None
patent: 06-299127 (1994-10-01), None
patent: 07-030209 (1995-01-01), None
patent: 08-096959 (1996-04-01), None
patent: 09-063770 (1997-03-01), None
patent: 2992092 (1999-12-01), None
patent: 2001-030403 (2001-02-01), None
patent: 2001-260580 (2001-09-01), None
patent: 2001-284342 (2001-10-01), None
patent: 2003-203898 (2003-07-01), None
patent: 2003-209073 (2003-07-01), None
patent: WO 03/010825 (2003-02-01), None
patent: WO 2005/057658 (2005-06-01), None
International Search Report (Application No. PCT/JP2005/001541) dated Mar. 22, 2005.
Written Opinion (Application No. PCT/JP2005/001541) dated Mar. 22, 2005.
Nikkei Electronics, “Sense of Crisis” is a Trigger. Ignited Evolution of a Sesame-Grain Sized Chip, Leading Trends, Nov. 18, 2002, No. 835, pp. 67-76.
Shimoda et al., “Surface Free Technology by Laser Annealing (SUFTLA),” IEDM 99: Technical Digest of International Electron Devices Meeting, 1999, pp. 289-292.
International Search Report (Application No. PCT/JP2004/018978) dated Mar. 15, 2005.
Written Opinion (Application No. PCT/JP2004/018978) dated Mar. 15, 2005.

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