Semiconductor storage element and manufacturing method thereof

Details Semiconductor storage element and manufacturing method thereof Semiconductor storage element and manufacturing method thereof

2011-03-22

2011-03-22

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257S325000, C257SE29301, C257SE49003, C438S263000, C438S288000, C977S726000, C977S943000

Reexamination Certificate

active

07910977

ABSTRACT:
A semiconductor storage element includes: a semiconductor layer constituted of a line pattern with a predetermined width formed on a substrate; a quantum dot forming an electric charge storage layer formed on the semiconductor layer through a first insulating film serving as a tunnel insulating film; an impurity diffusion layer formed in a surface layer of the semiconductor layer so as to sandwich the quantum dot therebetween; and a control electrode formed on the quantum dot through a second insulating film.

REFERENCES:
patent: 6165842 (2000-12-01), Shin et al.
patent: 6894352 (2005-05-01), Hu et al.
patent: 2002/0068406 (2002-06-01), Ishii
patent: 2002/0167002 (2002-11-01), Chae et al.
patent: 2003/0153151 (2003-08-01), Choi et al.
patent: 2005/0142753 (2005-06-01), Koh
patent: 2005/0179079 (2005-08-01), Wu
patent: 2006/0118853 (2006-06-01), Takata et al.
patent: 2006/0267073 (2006-11-01), Kato et al.
patent: 2006/0275984 (2006-12-01), Liu et al.
patent: 2004-343128 (2004-12-01), None
Yano et al., “Single-Electron Memory for Giga-to-Tera Bit Storage,” Proceedings of the IEEE (Apr. 1999), 87:633-651.
K. Gopalakrishnan, et al., “The Micro to Nano Addressing Block (MNAB)”, Proceedings of the IEEE, 4 pages (2005).
“IBM Non-Lithography Ultra Nanotechnology”, 2005 IEEE International Electron Device Meeting (2005 IEDM), Lecture No. 19.4, Nikkei Microdevices, Nikkei BP Corp., p. 3 (Jan. 2006).

Affiliated with

Also associated with

Rating

Semiconductor storage element and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor storage element and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor storage element and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2706633