Method for in-situ refurbishing a ceramic substrate holder

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S714000, C134S001200

Reexamination Certificate

active

07989353

ABSTRACT:
Method for operating a processing system and refurbishing a ceramic substrate holder within a process chamber of the processing system are described. The method includes plasma processing one or more substrates on the ceramic substrate holder, where the processing causes erosion of a nitride material of the ceramic substrate holder. The method further includes refurbishing the ceramic substrate holder in-situ without a substrate residing on the ceramic substrate holder, where the refurbishing includes exposing the ceramic substrate holder to a plasma-excited nitrogen-containing gas in the process chamber to at least partially reverse the erosion of the nitride material.

REFERENCES:
patent: 6573181 (2003-06-01), Srinivas et al.
patent: 7045014 (2006-05-01), Mahon
patent: 2001/0040091 (2001-11-01), Khurana et al.
patent: 2002/0006724 (2002-01-01), Shiota et al.
patent: 2006/0219178 (2006-10-01), Asakura
patent: 2007/0163617 (2007-07-01), Ozaki

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