Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-25
2011-01-25
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S332000, C257S334000, C257SE27060
Reexamination Certificate
active
07875927
ABSTRACT:
In a semiconductor device, a memory region and a logic region are provided on one silicon substrate. A trench is provided in the silicon substrate in the memory region, a memory cell transistor is provided in the memory region and a logic transistor is provided in the logic region. The memory cell transistor includes a first gate electrode constituted by a metal material. The first gate electrode is provided to be buried in the trench and to protrude outside of the trench. The logic transistor includes a second gate electrode constituted by same material as the metal material constituting the first gate electrode.
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McGinn IP Law Group PLLC
Renesas Electronics Corporation
Tran Tan N
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