Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

2011-06-07

2011-06-07

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

C257S103000, C438S022000, C438S037000

Reexamination Certificate

active

07956380

ABSTRACT:
A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation density is selected to be less than 1×107 (1/cm2) and thereby short-circuit caused by Ag migration generated along this dislocation can be avoided. Thus, this semiconductor light-emitting device is able to solve a problem of a shortened life and a problem with the fraction of defective devices encountered with the InGaN-based semiconductor light-emitting device.

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Japanese Office Action issued on May 11, 2010, for corresponding Japanese Patent Application No. 2005-010617.

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