Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-05-24
2011-05-24
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S488000, C438S758000, C118S718000, C118S724000
Reexamination Certificate
active
07947544
ABSTRACT:
An object is to provide a film deposition apparatus in which the amount of leakage from the outside of the chamber to the inside of the chamber is reduced. Even if leakage occurs from the outside of the chamber to the inside of the chamber, oxygen and nitrogen included in an atmosphere that surrounds the outer wall of the chamber are reduced as much as possible and the atmosphere is filled with a noble gas or hydrogen, whereby the inside of the chamber is kept cleaner at 1/100 or less, preferably, 1/1000 or less of oxygen concentration and nitrogen concentration than those in the air. Since the space with high airtightness is provided adjacent to the outside of the chamber, the chamber is covered with a bag and a high-purity argon gas is supplied to the bag.
REFERENCES:
patent: 6283060 (2001-09-01), Yamazaki et al.
patent: 6296735 (2001-10-01), Marxer et al.
patent: 2003/0136517 (2003-07-01), Hori et al.
patent: 2004/0118346 (2004-06-01), Yajima et al.
patent: 2007/0034155 (2007-02-01), Takatsu
patent: 06-151312 (1994-05-01), None
patent: 07-122621 (1995-05-01), None
patent: 09-316642 (1997-12-01), None
patent: 2000-182958 (2000-06-01), None
Furuno Makoto
Yamazaki Shunpei
Dang Phuc T
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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