Integrated circuit including memory element with spatially...

Details Integrated circuit including memory element with spatially... Integrated circuit including memory element with spatially...

2011-05-10

2011-05-10

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S330000, C257SE45002, C257SE21001

Reexamination Certificate

active

07939817

ABSTRACT:
An integrated circuit includes a heater element serving as a first electrode, a second electrode, a memory element comprising resistance changing material coupled to the heater element and to the second electrode, and a diffusion compensation region coupled to the heater element and to the resistance changing material. The diffusion compensation region includes a surplus of at least one diffusible species present in the memory element and provides at least one diffusible species to the memory element.

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J.H. Oh et al., “Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology”, IEEE, 1-4244-0439, Aug. 2006.
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S.J. Ahn et al., “Highly Reliable 50nm Contact Cell Technology for 256Mb PRAM”, 2005 Symposium on VLSI Technology Digest of Technical Papers.
Manzur Gill et al., “Ovonic Unified Memory—A High-performance Nonvolatile Memory Technology for Stand Alone Memory and Embedded Applications”.
Stefan Lai et al., “OUM—A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications”.

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