Multilayer thin film, substrate for electronic device, electroni

Details Multilayer thin film, substrate for electronic device, electroni Multilayer thin film, substrate for electronic device, electroni

1996-06-14

1998-09-01

Tsai, Jey

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438648, 438 2, 438 3, H01L 2131, H01L 21469

Patent

active

058011056

ABSTRACT:
A multilayer thin film of the invention has an oxide thin film formed on a semiconductor single crystal substrate, and the oxide thin film includes at least one epitaxial thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium). Included is an oriented thin film formed on the oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface. Consequently, there are provided a perovskite oxide thin film of (001) orientation, a substrate for an electronic device comprising the thin film, and a method for preparing the thin film.

REFERENCES:
patent: 5084437 (1992-01-01), Talvacchio
patent: 5185829 (1993-02-01), Yamada et al.

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