Polyimide as a mask in vapor hydrogen fluoride etching

Details Polyimide as a mask in vapor hydrogen fluoride etching Polyimide as a mask in vapor hydrogen fluoride etching

1998-07-01

2000-12-19

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430317, 216 58, G03C 500, G03F 726

Patent

active

06162585&

ABSTRACT:
A layer of polyimide or polysilicon is used as a mask in vapor hydrogen fluoride etching. Both non-photosensitive and photosensitive type polyimide may be used. A non-photosensitive polyimide mask requires the use of photoresist for patterning with a lithographic mask. Alternatively, photosensitive type polyimide may be patterned directly with the use of a lithographic mask. The resulting polyimide mask enables the etching of very small features with great uniformity. Such etching may be used to expose micropoint emitters of field emission devices.

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"The Right Tool for Polyimide Processes", Copyright 1995 Ultratech Stepper.
Ma, Y. et al., J. Vac. Sci, Technol, B 13(4), Jul./Aug. 1996, "Vapor Phase SiO2 etching and metallic contamination removal in an integrated cluster system", pp. 1460-1465.
Munoz, J., et al., J. Vac. Sci. Technol, B 13(6), Nov./Dec. 1995, "Dry development of photosensitive polyimides for high resolution and aspect ration applications," pp. 2179-2183.

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