Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Schottky barrier to polycrystalline semiconductor material
Reexamination Certificate
2011-08-16
2011-08-16
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Schottky barrier to polycrystalline semiconductor material
C257S046000, C257S104000, C257S761000, C257SE29146, C257SE29327, C257SE21162, C257SE21163, C438S685000, C438S571000
Reexamination Certificate
active
07999266
ABSTRACT:
A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNxmaterial layer and a poly-Si layer formed on the TaNxmaterial layer. The semiconductor device including poly-Si may be manufactured by forming a TaNxmaterial layer and forming a poly-Si layer by depositing silicon formed on the TaNxmaterial layer and annealing silicon.
REFERENCES:
patent: 6646352 (2003-11-01), Ohmi et al.
patent: 6927430 (2005-08-01), Hsu
patent: 2004/0232509 (2004-11-01), Vyvoda
Bae Hyung-jin
Lee Jung-Hyun
Park Young-soo
Xianyu Wenxu
Chen Yu
Harness & Dickey & Pierce P.L.C.
Jackson, Jr. Jerome
Samsung Electronics Co,. Ltd.
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