Method of forming an SOI substrate contact

Details Method of forming an SOI substrate contact Method of forming an SOI substrate contact

2011-01-11

2011-01-11

Dickey, Thomas L (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S424000, C257SE21564

Reexamination Certificate

active

07867893

ABSTRACT:
A method is provided of forming a conductive via for contacting a bulk semiconductor region of a semiconductor-on-insulator (“SOI”) substrate. A first opening is formed in a conformal layer overlying a trench isolation region, where the trench isolation region shares an edge with the SOI layer. A dielectric layer then is deposited atop the conformal layer and the trench isolation region, after which a second opening is formed which is aligned with the first opening, the second opening extending through the dielectric layer to expose the bulk semiconductor region. Finally, the conductive via is formed in the second opening.

REFERENCES:
patent: 6645796 (2003-11-01), Christensen et al.
patent: 2003/0203546 (2003-10-01), Burbach et al.
patent: 2004/0121599 (2004-06-01), Aminpur et al.
patent: 2008/0164531 (2008-07-01), Jawarani et al.

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