Method of forming micro pattern of semiconductor device

Details Method of forming micro pattern of semiconductor device Method of forming micro pattern of semiconductor device

2011-07-19

2011-07-19

Deo, Duy-Vu N (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S197000, C257SE21215

Reexamination Certificate

active

07981803

ABSTRACT:
The present invention relates to a method of forming a micro pattern of a semiconductor device. In the method according to an aspect of the present invention, an etch target layer, a first hard mask layer, and insulating patterns of a lonzenge are formed over a semiconductor substrate. A first auxiliary pattern is formed on the first hard mask layer including the insulating patterns, wherein a contact hole having the same shape as that of the insulating pattern is formed at the center of four adjacent insulating patterns, which form a quadrilateral. A second auxiliary pattern is formed by etching the first auxiliary pattern so that a top surface of the insulating patterns is exposed. The exposed insulating patterns are removed. A first hard mask pattern is formed by etching the first hard mask layer using an etch process employing the second auxiliary pattern as an etch mask. The etch target layer is etched using the first hard mask pattern.

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