Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-03
2011-05-03
Mai, Anh D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S388000, C257S412000, C257SE27060, C257SE29159
Reexamination Certificate
active
07936025
ABSTRACT:
Described is a CMOS transistor structure with a multi-layered gate electrode structure and a method of fabrication. The gate electrode structure has a three-layered metallic gate electrode and a polysilicon layer. The first metallic layer acts as a barrier to prevent the second metallic layer from reacting with an underlying dielectric. The second metallic layer acts to set the work function of the gate electrode structure. The third metallic layer acts as a barrier to prevent the second metallic layer from reacting with the polysilicon layer.
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Chau Robert
Doczy Mark
Doyle Brian
Kavalieros Jack
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Mai Anh D
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